The book “Compound Semiconductors: Physics, Technology, and Device Concepts” by Ferdinand Scholz provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for thin-layer and bulk epitaxial growth. It then briefly discusses the optical, electrical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern electronic and optoelectronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the ebook, the functionality and physics of optoelectronic and electronic device structures (LEDs, solar cells, laser diodes, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book.
Compound semiconductors form the back-bone of all electronic and opto-electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like DVDs and CDs for data storage and entertainment, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This PDF book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.
About the Author
Dr. Ferdinand Scholz was born in 1954 in Stuttgart, Germany. After graduating with a diploma in physics in 1981, he obtained a PhD in metal-organic vapor phase epitaxy (MOVPE) of GaInAs-InP quantum well structures in 1986. After heading the epitaxial group of the Physical Institute, University of Stuttgart, he got a full professorship at the Institute of Optoelectronics, Ulm University, Germany, in 2003. He has co-authored or authored more than four-hundred scientific papers in refereed journals.